| 15601102 |
Wilson HF, Warschkow O, Marks NA, Schofield SR, Curson NJ, Smith PV, Radny MW, McKenzie DR, Simmons MY: Phosphine dissociation on the Si (001) surface. Phys Rev Lett. 2004 Nov 26;93(22):226102. Epub 2004 Nov 23.
Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si (001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si (001). |
7(0,0,1,2) |